Phd Position in Electronics, France

Description:
In the studies of the reliability of advanced embedded memory it is important to characterize qualitatively and quantitatively the failure mechanisms occurring in cells. Technologies for non-volatile memory (flash and EEPROM), loxyde tunnel used to leffacement and programming point of memory must be sufficiently robust to ensure product specifications in terms of cycling and retention. In addition to the continued reduction of device dimensions, it is necessary to develop new methods of analysis and testing to account for new physical phenomena of failure.
One objective of this thesis is to model the electrical behavior obtained from basic structures and macrocell to correlate with those of the product. This doptimiser to the manufacturing process (eg doxyde thickness) and / or terms of programming.

The PhD student will use the resources for this electrical characterization as well as tools for testing macrocell. He must master the physics of semiconductors and have notions of statistical calculation.
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Education Level Required - BAC +5 (INGENIEUR, DESS, DEA ...) Desired Competencies are - Initiative / Autonomy, Electronic Component, Semiconductor Process, Team Work / Cooperation, Creativity / Innovation, Electrical Measurements, Physics of Semiconductors, Adaptability, Flexibility . The Other skills required are Statistic method. Reliability in microelectronics.

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